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| DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 1PS76SB10 Schottky barrier diode Product specification 1996 Oct 14 Philips Semiconductors Product specification Schottky barrier diode FEATURES * Low forward voltage * Guard ring protected * Very small plastic SMD package. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits * Blocking diodes. Marking code: S0. The marking bar indicates the cathode. MAM283 1PS76SB10 DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package. handbook, 4 columns k a Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms CONDITIONS - - - - -65 - -65 MIN. MAX. 30 200 300 600 +150 125 +125 V mA mA mA C C C UNIT 1996 Oct 14 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD323 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS reverse current diode capacitance VR = 25 V; note 1; see Fig.3 f = 1 MHz; VR = 1 V; see Fig.4 CONDITIONS 1PS76SB10 MAX. UNIT 240 320 400 500 800 2 10 mV mV mV mV mV A pF VALUE 450 UNIT K/W 1996 Oct 14 3 Philips Semiconductors Product specification Schottky barrier diode GRAPHICAL DATA MSA892 1PS76SB10 10 3 handbook, halfpage IF (mA) 10 2 (1) (2) (3) 10 3 IR (A) 10 2 (2) (1) MSA893 10 10 1 (1) (2) (3) 1 (3) 10 1 10 1 0 0.4 0.8 VF (V) 1.2 0 10 20 VR (V) 30 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. 15 Cd (pF) 10 MSA891 5 0 0 10 20 V R (V) 30 f = 1 MHz; Tamb = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 14 4 Philips Semiconductors Product specification Schottky barrier diode PACKAGE OUTLINE 1PS76SB10 handbook, full pagewidth 0.55 0.40 1.00 max 0.25 0.10 0.05 max MBC672 - 1 A 1.35 1.15 0.40 0.25 1.8 1.6 2.7 2.3 Dimensions in mm. The marking bar indicates the cathode. 0.2 M A Fig.5 SOD323. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 14 5 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. |
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